In-plane anisotropy in the direction of the dislocation bending in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub> grown by epitaxial lateral overgrowth
Katsuaki Kawara, Takayoshi Oshima, Mitsuru Okigawa, Takashi Shinohe
Abstract
Threading dislocations in α-Ga2O3 grown by epitaxial lateral overgrowth (ELO) were observed by using atomic force microscopy after a surface etching using 10 wt% KOH aqueous solution heated at 60 °C. The ELO α-Ga2O3 was characterized by an in-plane anisotropy in the direction of the dislocation bending as followings: the dislocations in ELO α-Ga2O3 bend in the direction of α-Ga2O3, while the dislocation-free areas expand in the direction from the positions of windows. The anisotropy is an important factor to control the dislocations in α-Ga2O3 and to optimize the ELO of α-Ga2O3.
Topics & Concepts
EpitaxyDislocationMaterials scienceAnisotropyBendingCondensed matter physicsCrystallographyEtching (microfabrication)Atomic force microscopyIsotropic etchingOpticsComposite materialNanotechnologyChemistryPhysicsLayer (electronics)Ga2O3 and related materialsZnO doping and propertiesSemiconductor materials and devices