Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors
Qitao Hu, Si Chen, P. M. Solomon, Zhen Zhang
Abstract
-DB interaction kinetics is systematically investigated. Our SiNWFETs demonstrate unprecedented capability for electrical sensing applications, especially for investigating the physics of solid/liquid interfacial interactions at the single charge level.
Topics & Concepts
Materials scienceOptoelectronicsNanowireTransistorSiliconField-effect transistorIonCoulomb blockadeSemiconductorNanotechnologyVoltageChemistryPhysicsQuantum mechanicsOrganic chemistryNanowire Synthesis and ApplicationsElectronic and Structural Properties of OxidesSemiconductor materials and devices