Ultraviolet to Near-Infrared Broadband Phototransistors Based on Hybrid InGaZnO/C8-BTBT Heterojunction Structure
Meng Zhang, Jinxuan Wu, Haotao Lin, Xianjun Zhang, Jianlong Xu, Yan Yan, Sui‐Dong Wang, Man Wong, Hoi Sing Kwok
Abstract
In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression of dark current by field effect regulation, the phototransistors demonstrate high normalized detectivity (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> - 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> jones). The diversity of organic semiconductor materials provides a wide range of choices to realize broadband detection by the band matching with inorganic semiconductor materials.