Cation‐Alloying‐Induced Blue‐Shifted and Wide‐Spectrum Polarization‐Sensitive Photodetection in Quasi‐1D SbBiS<sub>3</sub>
Wen Yang, Tao Xiong, Yue‐Yang Liu, Juehan Yang, Qun Xu, Zhongming Wei
Abstract
Quasi‐1D ternary semiconductors have attracted considerable attention recently because of their additional bandgap engineering deriving from the variable stoichiometry. Herein, SbBiS 3 single crystals are successfully synthesized by chemical vapor transport (CVT) method. The basic characterizations combined with theoretical calculations reveal that SbBiS 3 semiconductor has an intrinsically low symmetry structure and in‐plane anisotropy of optical absorption. Significantly, the bandgap of SbBiS 3 shows a blue‐shifted compared to the bandgaps of binary Sb 2 S 3 and Bi 2 S 3 . Moreover, the quasi‐1D SbBiS 3 ‐based photodetector shows a wide‐spectrum photosensitivity (360–1064 nm), a fast response speed ( τ rise ≈ 10 μs and τ decay ≈ 94 μs) at 532 nm, a high photoresponsivity (6.82 A W −1 ) at 360 nm. In addition, the photodetector exhibits an anisotropic photocurrent ratio up to 1.12 at 808 nm. The work demonstrates the SbBiS 3 prepared by cationic alloy is a promising candidate for the application of polarized optoelectronics.