1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination
Xinke Liu, Feng Lin, Jian Li, Yuheng Lin, Junye Wu, Haofan Wang, Xiaohua Li, Shuangwu Huang, Qi Wang, Hsien‐Chin Chiu, Hao‐Chung Kuo
Abstract
In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage <inline-formula> <tex-math notation="LaTeX">${V}_{{\mathrm {BR}}}$ </tex-math></inline-formula> of the diodes. Under the same testing conditions, <inline-formula> <tex-math notation="LaTeX">${V}_{{\mathrm {BR}}}$ </tex-math></inline-formula> was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential ON-resistance <inline-formula> <tex-math notation="LaTeX">${R}_{{\scriptscriptstyle {\mathrm {ON}}}}$ </tex-math></inline-formula> of 5.1 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot {\mathrm {cm}}^{2}$ </tex-math></inline-formula> and low turn-on voltage <inline-formula> <tex-math notation="LaTeX">${V}_{{\scriptscriptstyle {\mathrm {ON}}}}$ </tex-math></inline-formula> of 0.63 V. Given <inline-formula> <tex-math notation="LaTeX">${V}_{{\scriptscriptstyle {\mathrm {ON}}}}$ </tex-math></inline-formula> of < 0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest <inline-formula> <tex-math notation="LaTeX">${V}_{{\mathrm {BR}}}$ </tex-math></inline-formula> in the reported work up to today.