A High-Performance Dual-Topology CMOS Rectifier With 19.5-dB Power Dynamic Range for RF-Based Hybrid Energy Harvesting
Alexander Choo, Harikrishnan Ramiah, Kishore Kumar Pakkirisami Churchill, Yong Chen, Saad Mekhilef, Pui‐In Mak, Rui P. Martins
Abstract
This brief reports a dual-topology CMOS rectifier with an extended power dynamic range (PDR) for radio frequency (RF)-based hybrid energy harvesting (RF-HEH) systems. By leveraging both the cross-coupled differential drive (CCDD) and the Dickson topologies with high forward conduction and low reverse leakage, we obtain an extension of the rectifier’s PDR by adaptively disabling the CCDD counterpart and enabling the Dickson counterpart to dominate the rectifier’s performance during high-power operation. Apart from that, we formulate a rectifier-performance index (RPI), which accounts for the power conversion efficiency (PCE), the PDR, the sensitivity, and the load resistance of the rectifier to provide an adequate performance benchmark with the state-of-the-art rectifiers. Fabricated in a 130-nm CMOS, the proposed dual-topology rectifier measures a wide PDR of 19.5 dB with a peak PCE of 78.4% for a 100- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{k}\Omega $ </tex-math></inline-formula> load operating at 900 MHz. Besides, our prototype records the highest RPI of 19.2 compared to the recent arts operating at GSM900.