Dark Count Rate Modeling in Single-Photon Avalanche Diodes
Aymeric Panglosse, Philippe Martin-Gonthier, Olivier Marcelot, Cédric Virmontois, Olivier Saint-Pé, Pierre Magnan
Abstract
In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology. The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate the DCR, the model is based on a combination of measurements to acquire data related to trap population, Technology Computer-Aided Design (TCAD) simulations and a Matlab routine.
Topics & Concepts
Avalanche diodeCMOSSingle-photon avalanche diodeDiodeMATLABComputer scienceTrap (plumbing)Technology CADAvalanche photodiodeLidarPhotonElectronic engineeringPhysicsOptoelectronicsElectrical engineeringDetectorOpticsEngineeringTelecommunicationsCADVoltageMeteorologyEngineering drawingOperating systemBreakdown voltageAdvanced Optical Sensing TechnologiesCCD and CMOS Imaging SensorsAdvanced Fluorescence Microscopy Techniques