In<sub>0.52</sub>Al<sub>0.48</sub>As Based Single Photon Avalanche Diodes With Stepped E-Field in Multiplication Layers and High Efficiency Beyond 60%
Yi-Shan Lee, Yan-Min Liao, Ping-Li Wu, Chi-En Chen, Yu-Jie Teng, Yu-Ying Hung, Jin‐Wei Shi
Abstract
We carry out an In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As single photon avalanche diode which exhibits a single photon detection efficiency exceeding 60% at 1310 nm and neat temporal characteristic of 65 ps. A novel concept of dual multiplication layer is incorporated to avoid the tradeoff between dark count rate, afterpulsing and timing jitter, paving the possibility to improve the overall performance of a single photon detector. Based on this elevated device structure, we further optimize the detection efficiency and timing jitter by employing a delicate mesa structure to better confine the electric field distribution within the central multiplication region. For our detector operated under gated mode, a shorten gate width together with an increase of excess bias percentage leads to a significant improvement in the detection performance. We eventually achieve a single photon detection efficiency of 61.4% without the involvement of afterpulsing at the gating frequency of 10 kHz for 200 K.