A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO<sub>2</sub>-ZrO<sub>2</sub>-HfO<sub>2</sub> and ZrO<sub>2</sub>-HfO<sub>2</sub>-ZrO<sub>2</sub> Superlattice Ferroelectric Films
Kaixuan Li, Yue Peng, Wenwu Xiao, Fenning Liu, Yueyuan Zhang, Ze Feng, Hong Dong, Yan Liu, Yue Hao, Genquan Han
Abstract
In this article, the effect of starting layer on the ferroelectric properties and reliability of HfO2-ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically investigated. Compared with that of the ZHZ device, a higher value of remnant polarization ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{r}{)}$ </tex-math></inline-formula> for the HZH device was achieved. However, the ZHZ structure exhibits a better wake-up performance and frequency stability than HZH, as well as a higher inversion speed and more endurance cycles. Accordingly, a hybrid model involving ferroelectric (FE) polarization and interfacial ion migration is proposed. This study is helpfxg1ul for understanding and optimizing the HfO2-based FE films for non-volatile memory applications.