Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride
Nai‐Jie Guo, Wei Liu, Zhipeng Li, Yuan-Ze Yang, Shang Yu, Yu Meng, Zhaoan Wang, Xiaodong Zeng, Fei-Fei Yan, Qiang Li, Junfeng Wang, Jin‐Shi Xu, Yi‐Tao Wang, Jian‐Shun Tang, Chuan‐Feng Li, Guang-Can Guo
Abstract
defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.
Topics & Concepts
Hexagonal boron nitrideIon implantationMaterials scienceHexagonal crystal systemBoronBoron nitrideNitrideIonSpin (aerodynamics)NanotechnologyEngineering physicsCrystallographyChemistryEngineeringLayer (electronics)Organic chemistryGrapheneAerospace engineeringDiamond and Carbon-based Materials ResearchGraphene research and applicationsSemiconductor materials and devices