Efficient PbSe Quantum Dot Infrared Photovoltaic Applying MXene Modified ZnO Electron Transport Layer
Sisi Liu, Meng Wang, Xiong Yu, Hao Li, Haifei Lu, Xiaoyan Wen, Mingyu Li, Jianbing Zhang
Abstract
Abstract Infrared (IR) solar cells are potential optoelectronic devices for boosting the power conversion efficiency (PCE) of conventional photovoltaics (such as pervoskite and silicon solar cells) by broadening the utilization range of the sunlight spectrum to short‐wavelength infrared region. PbSe colloidal quantum dots (QDs) are one of the optimal candidates for IR solar cells because of their tunable bandgap in the IR region and flexible solution processibility. At present, the best PbSe QD IR photovoltaics generally adopt ZnO as an electron transport layer (ETL). However, the intrinsic drawbacks and surface defects of ZnO can potentially deteriorate the PCE of devices. Herein, Ti 3 C 2 T x , a representative 2D transition carbide, is combined with sol‐gel ZnO to develop a new hybrid ETL for fabricating high‐performance IR solar cells. This combination effectively suppresses the defects within ZnO by forming new bondings and simultaneously enhances the crystalline of ZnO film. Meanwhile, the introduction of Ti 3 C 2 T x into ZnO film accelerates the transport and collection of photo‐generated carriers by constructing a new electron transport pathway. Consequently, compared to the bare devices, the infrared PCE of PbSe QD solar cells increases by 19.5% to 1.04%. These results demonstrate that this hybrid ETL can offer a bright approach for developing high‐performance optoelectronic devices.