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A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

Vidyadhar Gupta, Himanshi Awasthi, Nitish Kumar, Amit Kumar Pandey, Abhinav Gupta

2021Silicon16 citationsDOI

Topics & Concepts

Subthreshold conductionThreshold voltageMaterials scienceMOSFETSubthreshold slopeDopingChannel (broadcasting)VoltageDrain-induced barrier loweringOptoelectronicsPoisson's equationCurrent (fluid)Boundary value problemDiffusionCondensed matter physicsComputational physicsElectrical engineeringTransistorMathematical analysisPhysicsThermodynamicsMathematicsEngineeringAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices
A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs | Litcius