Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors
Xinling Liu, Chi Zhang, Enlong Li, Caifang Gao, Ruixue Wang, Yu Liu, Fucai Liu, Wu Shi, Yahua Yuan, Jian Sun, Yen‐Fu Lin, Junhao Chu, Wenwu Li
Abstract
Abstract Memristors based on 2D semiconductors hold great promise due to their atomic‐level thickness and tunable optoelectronic properties. However, a significant challenge lies in suppressing the large off‐state current, which leads to additional standby power consumption. Here, a simple and versatile method is presented to address this issue by introducing a thin h‐BN interlayer between 2D semiconductors and the electrodes. The thickness of the h‐BN interlayer serves as a pivotal parameter for modulating the interfacial Schottky barrier, thereby influencing the off‐state current level. This fabricated graphene/α‐In 2 Se 3 /h‐BN/Cr‐Au memristor, forming a van der Waals heterostructure, exhibits unipolar resistive switching behavior. Remarkably, the memristor incorporating an 8 nm h‐BN interlayer showcases an ultralow off‐state current of 4.2 × 10 −13 A, five orders of magnitude lower than that without the h‐BN interlayer. It also achieves a current switching on/off ratio of up to 10 9 and realizes 32 distinct resistance states, enabling robust multi‐bit memory capabilities. Excellent stability and durability are maintained due to the self‐encapsulation of the h‐BN interlayer. Furthermore, this method is also applicable to memristors built on HfS 2 , WS 2 , and WSe 2 , highlighting its broad potential for technological applications.