Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD
Zhaole Su, Rui Kong, Xiaotao Hu, Yimeng Song, Zhen Deng, Yang Jiang, Yangfeng Li, Hong Chen
Topics & Concepts
Materials scienceMetalorganic vapour phase epitaxyHeterojunctionSapphireOptoelectronicsLayer (electronics)DislocationSubstrate (aquarium)NitrideComposite materialEpitaxyOpticsLaserGeologyPhysicsOceanographyGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties