Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates
Miaodong Zhu, Guoxin Li, Hangtian Li, Zhonghong Guo, Yingguo Yang, Jianbo Shang, Yikang Feng, Yunshu Lu, Zexi Li, Xiaohang Li, Fangliang Gao, Wenqiu Wei, Shuti Li
Abstract
This review highlights the challenges and advancements in p-GaN gate HEMTs on silicon substrates. It also discusses several attempts to enhance device performance and explores the future developments of p-GaN gate HEMT.
Topics & Concepts
Materials scienceTransistorOptoelectronicsSiliconElectronInduced high electron mobility transistorHigh-electron-mobility transistorElectron mobilityEngineering physicsNanotechnologyElectrical engineeringEngineeringPhysicsVoltageQuantum mechanicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties