120 A/1.78 kV p-Cr<sub>2</sub>O<sub>3</sub>/n-β -Ga<sub>2</sub>O<sub>3</sub> Heterojunction PN Diodes With Slanted Mesa Edge Termination
Yitao Feng, Hong Zhou, Junyi Ma, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Jun Yuan, Ruoshi Peng, Shaodong Xu, Yue Hao, Jincheng Zhang
Abstract
In this study, we demonstrate large-area, high-performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3-based heterojunction PN diodes (PNDs) featuring a p-type chromium oxide (p-Cr2<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {O}}_{{3}}\text {)}$ </tex-math></inline-formula> layer deposited via magnetron sputtering and an optimized slanted-mesa edge termination (ET) for electric field management. The fabricated diodes exhibit an active area of 9 mm2 and achieve state-of-the-art electrical characteristics, including a high breakdown voltage (BV) of 1.78 kV, a forward current (IF) of 120 A, and an ultralow on-resistance (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mathrm {R}}_{\text {on}}\text {)}$ </tex-math></inline-formula> of 69 m<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>. Notably, the slanted-mesa-ET PNDs show only a marginal reduction in forward current compared to their non-ET counterparts, while achieving a 36% enhancement in BV. This results in a power figure of merit (PFOM) of 0.511 GW/cm2, the highest reported to date for any large-area (>1 mm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{{2}}\text {)} \beta $ </tex-math></inline-formula>-Ga2O3 diode. This exceptional performance underscores the viability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 for next-generation high-power electronics, particularly through the introduction of novel p-type materials and edge termination designs.