Litcius/Paper detail

Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes

Yifan Yao, Hongjian Li, Panpan Li, Christian J. Zollner, Michael Wang, Michael Iza, James S. Speck, Steven P. DenBaars, Shuji Nakamura

2022Applied Physics Express23 citationsDOIOpen Access PDF

Abstract

Abstract AlGaN-based deep ultraviolet (DUV) micro-light-emitting diodes ( μ LEDs) with emission wavelengths between 277 and 304 nm with mesa dimensions down to 20 μ m were fabricated. Their size-dependent electrical and optical characteristics were analyzed. At 20 A cm −2 , the external quantum efficiency (EQE) increased from 2.0% to 2.3% mainly due to the improved light extraction efficiency; the forward voltage was 7.6 V in 20 μ m sized μ LEDs in comparison to 9.1 V in 300 μ m LEDs due to better current spreading in the smaller devices. The peak EQEs of the 20 μ m μ LEDs were 2.5% and 4.0% for 277 and 304 nm, among the highest reported for DUV μ LEDs.

Topics & Concepts

Light-emitting diodeOptoelectronicsMaterials scienceDiodeUltravioletQuantum efficiencyWavelengthOpticsPhysicsGaN-based semiconductor devices and materialsPhotocathodes and Microchannel PlatesGa2O3 and related materials