Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications
Kuan Ning Huang, Yueh Chin Lin, Chien-Ying Wu, Jin Hwa Lee, Chia Chieh Hsu, Jing Yao, Chao Hsin Chien, Edward Yi Chang
Topics & Concepts
High-electron-mobility transistorMaterials scienceOptoelectronicsThreshold voltageBreakdown voltageGate dielectricGate oxideCapacitorDielectricTransistorVoltageElectrical engineeringEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices