Resistivity Scaling in Epitaxial CuAl<sub>2</sub>(001) Layers
Minghua Zhang, Daniel Gall
Abstract
Epitaxial CuAl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (001) layers with thickness <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${d}$ </tex-math></inline-formula> = 10.2–141 nm are deposited by co-sputtering onto MgO(001) substrates at 300 °C and their resistivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho $ </tex-math></inline-formula> is measured <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in situ</i> to quantify the CuAl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> resistivity scaling. A combination of X-ray diffraction <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\theta $ </tex-math></inline-formula> - <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2\theta $ </tex-math></inline-formula> scans, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\omega $ </tex-math></inline-formula> rocking curves, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\varphi $ </tex-math></inline-formula> -scans confirms the single-crystal microstructure with a 45°-rotated epitaxy with CuAl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (001) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \vert $ </tex-math></inline-formula> MgO(001) and CuAl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (100) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vert \vert $ </tex-math></inline-formula> MgO(110). The measured <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho $ </tex-math></inline-formula> increases with decreasing <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${d}$ </tex-math></inline-formula> , which is well described by the Fuchs–Sondheimer model, yielding a room-temperature electron mean free path <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\lambda $ </tex-math></inline-formula> = 15.6 nm with a bulk resistivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho _{o}$ </tex-math></inline-formula> = <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$7.7 ~\mu \Omega \cdot cm$ </tex-math></inline-formula> . The latter value is 18% above the previously reported <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho _{o}$ </tex-math></inline-formula> , which is attributed to electron scattering at Al vacancies with a concentration of 6.4% per site, as quantified by Rutherford backscattering and X-ray reflectivity. Transport measurements at 77 K confirm that <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\rho _{o}\lambda $ </tex-math></inline-formula> = (12 ± 1) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times 10^{-16} \Omega \text{m}$ </tex-math></inline-formula> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is temperature-independent. This value is 79% larger than for Cu, indicating a more pronounced resistivity size effect in CuAl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . Thus, CuAl <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is promising only as Cu-replacement interconnect metal if its low melting point facilitates large grains and its high cohesive energy provides reliability benefits and an associated reduction in liner thickness.