Ablation characteristics on silicon from ultrafast laser radiation containing single MHz and GHz burst pulses

Abstract

Abstract The authors present results of ablation on silicon with ultrafast laser radiation featuring burst pulses using an amplified burst-mode solid-state laser, featuring an emitting wavelength of 1030 nm to generate single burst cavities on silicon. Laser parameter are varied for different pulse durations from 270 fs up to 10 ps, burst fluences, and number of sub-pulses per burst in the respective burst regime with sub-pulse repetition rates of 65 MHz and 5 GHz. The resulting ablated volume per burst and per sub-pulse in a burst as well as the topography are investigated and discussed.

Topics & Concepts