Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics
Francisco Pasadas, Alberto Medina‐Rull, Francisco G. Ruiz, Javier N. Ramos-Silva, Aníbal Pacheco-Sánchez, Mari Carmen Pardo, Alejandro Toral-López, A. Godoy, Eloy Ramírez‐García, David Jiménez, Enrique G. Marín
Abstract
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of the V-shaped transfer curve, enables to redesign and highly simplify conventional analog circuits, and simultaneously to seek for multifunctionalities, especially in the HF domain. This study presents new insights for the design of different HF applications such as power amplifiers, mixers, frequency multipliers, phase shifters, and modulators that specifically leverage the inherent ambipolarity of graphene-based transistors.