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Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories

Ionel Stavarache, Ovidiu Cojocaru, Valentin‐Adrian Maraloiu, V. S. Teodorescu, T. Stoïca, Magdalena Lidia Ciurea

2020Applied Surface Science11 citationsDOI

Topics & Concepts

High-resolution transmission electron microscopyAmorphous solidAnnealing (glass)Materials scienceSputter depositionNanocrystalTransmission electron microscopyAtmospheric temperature rangeAnalytical Chemistry (journal)OxideNanotechnologyChemical engineeringSputteringThin filmCrystallographyChemistryComposite materialMetallurgyEngineeringMeteorologyChromatographyPhysicsSemiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceSemiconductor materials and interfaces
Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories | Litcius