Ultralow sintering temperature and piezoelectric properties of Bi(Zn <sub>1/2</sub> Ti <sub>1/2</sub> )O <sub>3</sub> −BiScO <sub>3</sub> −PbTiO <sub>3</sub> for low‐temperature co‐firing applications
Shuting Pang, Yiping Wang, Ying Yang, Jiyang Zhang, Querui Hu, Jingjing Shi, XiongJie Li
Abstract
Abstract Bi(Zn 1/2 Ti 1/2 )O 3 −BiScO 3 −PbTiO 3 (BZT−BS−PT) high Curie temperature piezoelectric ceramics were synthesized by the conventional solid‐state reaction method. Systematical investigations on the sintering, piezoelectric, and dielectric properties of the piezoceramics have been conducted. It was found that the sintering temperature could be remarkably depressed by varying the compositions in BZT−BS−PT systems. For composition of 11BZT−34BS−55PT ceramic, the sintering temperature is even lowered down to 750°C without any extra additions of sintering aids. Meanwhile, the ceramic sintered at this ultralow temperature presents dense microstructure with relative density up to 97%, as well as optimal properties of piezoelectric coefficient d 33 of 336 pC/N and Curie temperature of 415°C. The mechanism of low sintering temperature may be ascribed to the low melting point bismuth‐based components in BZT−BS−PT solid solutions. Furthermore, 11BZT−34BS−55PT multilayer ceramics have been co‐fired at 750°C with Ag internal electrodes. The dense structures, low cost, and optimal comprehensive properties of the co‐fired multilayers illustrate obvious advantages of the ultralow sintering temperature in LTCC devices, implying promising applications of this Bi(Zn 1/2 Ti 1/2 )O 3 −BiScO 3 −PbTiO 3 high Curie temperature ternary system.