Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation
Akira Uedono, Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Masayuki Imanishi, Shoji Ishibashi, Yusuke Mori
Topics & Concepts
Positron annihilationEpitaxyVacancy defectVapor phaseMaterials scienceAnnihilationOxidePositronCondensed matter physicsCrystallographyChemistryNuclear physicsPhysicsNanotechnologyMetallurgyLayer (electronics)ThermodynamicsElectronMuon and positron interactions and applicationsSemiconductor materials and devicesGaN-based semiconductor devices and materials