Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He, Houqiang Fu
Abstract
Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage ( BV ) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.
Topics & Concepts
Materials scienceSchottky barrierThermionic emissionOptoelectronicsSchottky diodeDiodeAnodeBand gapCathodeElectronChemistryElectrodePhysicsPhysical chemistryQuantum mechanicsGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices