Modulating the Ferroelectricity of Hafnium Zirconium Oxide Ultrathin Films via Interface Engineering to Control the Oxygen Vacancy Distribution
Joonbong Lee, Myeong Seop Song, Woo‐Sung Jang, Jinho Byun, Hojin Lee, Min Hyuk Park, Jaekwang Lee, Young‐Min Kim, Seung Chul Chae, Taekjib Choi
Abstract
Abstract Hafnium oxides‐based ferroelectric materials are promising for applications in nonvolatile memory devices. To control the ferroelectricity of such materials, it is necessary to tune their polymorphism, interfacial features, and defect (oxygen vacancy) distribution. A strategy is described for enhancing the ferroelectric properties of polycrystalline hafnium zirconium oxide (HZO) ultrathin films by modifying the oxygen pressure during the device preparation stage, which involves thermal annealing of TiN electrodes that serve as oxygen reservoirs. Microstructural and chemical characterizations along with theoretical analysis reveal that interfacial layers of TiO 2− x (or TiO x N y ) can characteristically form between the TiN electrode and the HZO thin film, depending on the oxygen treatment conditions. These interfacial layers directly affect the polymorphic distribution of the as‐deposited HZO. In particular, the engineered interfacial TiO 2− x layer facilitates the generation and stabilization of ferroelectric orthorhombic phase HZO by promoting the uniform distribution of oxygen vacancies. Electric field cycling tests further highlight the enhanced ferroelectric polarization and coercive voltage following interfacial engineering. The results presented herein demonstrate successful tuning of the structural and interfacial properties of polycrystalline HZO devices, thus enabling control over their ferroelectric characteristics, which is critical for the fabrication of devices with designed functionality.