High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber
Junting Liu, Fang Yang, Junpeng Lü, Shuai Ye, Haowen Guo, Hongkun Nie, Jialin Zhang, Jingliang He, Baitao Zhang, Zhenhua Ni
Abstract
Abstract Atomically thin Bi 2 O 2 Se has emerged as a novel two-dimensional (2D) material with an ultrabroadband nonlinear optical response, high carrier mobility and excellent air stability, showing great potential for the realization of optical modulators. Here, we demonstrate a femtosecond solid-state laser at 1.0 µm with Bi 2 O 2 Se nanoplates as a saturable absorber (SA). Upon further defect regulation in 2D Bi 2 O 2 Se, the average power of the mode-locked laser is improved from 421 mW to 665 mW, while the pulse width is decreased from 587 fs to 266 fs. Moderate Ar + plasma treatments are employed to precisely regulate the O and Se defect states in Bi 2 O 2 Se nanoplates. Nondegenerate pump-probe measurements show that defect engineering effectively accelerates the trapping rate and defect-assisted Auger recombination rate of photocarriers. The saturation intensity is improved from 3.6 ± 0.2 to 12.8 ± 0.6 MW cm −2 after the optimized defect regulation. The enhanced saturable absorption and ultrafast carrier lifetime endow the high-performance mode-locked laser with both large output power and short pulse duration.