64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors
Binhao Wang, Zhihong Huang, Yuan Yuan, Di Liang, Xiaoge Zeng, Marco Fiorentino, Raymond G. Beausoleil
Abstract
We demonstrate low-voltage waveguide silicon-germanium avalanche photodiodes (APDs) integrated with distributed Bragg reflectors (DBRs). The internal quantum efficiency is improved from 60% to 90% at 1550 nm assisted with DBRs while still achieving a 25 GHz bandwidth. A low breakdown voltage of 10 V and a gain bandwidth product of near 500 GHz are obtained. APDs with DBRs at a data rate of 64 Gb/s pulse amplitude modulation with four levels (PAM4) show a 30%–40% increase in optical modulation amplitude (OMA) compared to APDs with no DBR. A sensitivity of around <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:mo form="prefix">−</mml:mo> <mml:mn>13</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>dBm</mml:mi> </mml:mrow> </mml:math> at a data rate of 64 Gb/s PAM4 and a bit error rate of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m2"> <mml:mrow> <mml:mn>2.4</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mrow> <mml:mo>−</mml:mo> <mml:mn>4</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> is realized for APDs with DBRs, which improves the sensitivity by <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m3"> <mml:mrow> <mml:mo form="prefix">∼</mml:mo> <mml:mn>2</mml:mn> <mml:mtext> </mml:mtext> <mml:mi>dB</mml:mi> </mml:mrow> </mml:math> compared to APDs with no DBR.