Litcius/Paper detail

Observation of Dynamic <i>V</i> <sub>TH</sub> of p-GaN Gate HEMTs by Fast Sweeping Characterization

Xiangdong Li, Benoit Bakeroot, Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, G. Groeseneken, Stefaan Decoutere

2020IEEE Electron Device Letters80 citationsDOIOpen Access PDF

Abstract

In this work, fast sweeping characterization with an extremely short relaxation time was used to probe the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> instability of p-GaN gate HEMTs. As the ID-VG sweeping time deceases from 5 ms to 5 μs, the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> dramatically degenerates from 3.13 V to 1.76 V, meanwhile the hysteresis deteriorates from 22.6 mV to 1.37 V. Positive bias temperature instability (PBTI) measurement by fast sweeping shows the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> features a very fast shifting process but a slower recovering process. D-mode HEMTs counterpart without Mg contamination demonstrates a negligible V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> shift and hysteresis, proving the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> instability is probably due to the ionization of acceptor-like traps in the p-GaN depletion region. Finally, the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> instability is verified by a GaN circuit under switching stress. The V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> instability under different sweeping speed uncovers the fact that the high V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> by conventionally slow DC measurements is probably artificial. The DC V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> should be high enough to avoid HEMT faulty turn-on.

Topics & Concepts

PhysicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices