Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices
Robert A. Johnson, Arthur F. Witulski, Dennis R. Ball, K.F. Galloway, Andrew L. Sternberg, Robert A. Reed, Ronald D. Schrimpf, Michael L. Alles, Jean‐Marie Lauenstein, John M. Hutson
Abstract
A method of analyzing ion-induced reverse leakage current in SiC power devices is described. The resulting methodology enables the estimation of the proportion of ion strikes that produce step increases in leakage current as well as distributions of sensitive die areas relative to leakage step magnitude. These results are compared across various bias and ion linear energy transfer combinations to isolate the influence of each variable.
Topics & Concepts
Leakage (economics)Materials scienceIonLeakage powerNuclear engineeringCurrent (fluid)Silicon carbideHeavy ionOptoelectronicsElectronic engineeringElectrical engineeringVoltagePhysicsTransistorEngineeringQuantum mechanicsMetallurgyMacroeconomicsEconomicsSilicon Carbide Semiconductor TechnologiesElectrostatic Discharge in ElectronicsIntegrated Circuits and Semiconductor Failure Analysis