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Quantification of defects engineered in single layer MoS<sub>2</sub>

Frederick Aryeetey, Tetyana Ignatova, Shyam Aravamudhan

2020RSC Advances53 citationsDOIOpen Access PDF

Abstract

We report on controllably creating and quantifying atomic defects with varying sulfur vacancies using helium ion irradiation in MoS<sub>2</sub>.

Topics & Concepts

Layer (electronics)Materials scienceNanotechnology2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications
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