Complete logic operations in an ambipolar tellurium homojunction via non-invasive scanning probe lithography
Haoting Ying, Manzhang Xu, Xiaotong Xu, Liaoyong Wen, Zheng Liu, Xuewen Wang, Xiaorui Zheng, Wei Huang
Abstract
The ongoing demand for the miniaturization of integrated circuits has incentivized research in low-dimensional semiconductors. Bulk tellurium (Te) naturally contains a 1D atomic chain architecture, but the performance of Te nanodevices is limited by synthesis strategy and lithographic techniques, which hamper their applications in nanoelectronics. In this work, we use non-invasive scanning probe lithography to fabricate high-performing Te field-effect transistors (FETs) using specially synthesized 1D Te nanoribbons. Ambipolar Te conduction is achieved with electron and hole conductivity mobilities exceeding 5 × 104 and 1.3 × 103 cm2 V−1 s−1 for temperatures below 80 K, with on/off ratios of over 108 and 106, respectively. A p-n diode on a Te homojunction is constructed via a dual-gate configuration with a rectification ratio of over 107. The single Te FET is demonstrated to perform seven basic logic operations, i.e., as an AND, OR, XOR, NOT, NAND, NOR, and XNOR gate.