Charge stabilization of shallow nitrogen-vacancy centers using graphene/diamond junctions
Moriyoshi Haruyama, Yuki Okigawa, Mitsuhiro Okada, H. Nakajima, Toshiya Okazaki, Hiromitsu Kato, Toshiharu Makino, Takatoshi Yamada
Abstract
We studied the charge-state stabilization of shallow nitrogen-vacancy (NV) centers in (111) diamond using graphene/diamond junctions. Measurement of the fluorescence stability and evaluation of the charge-state stability were conducted on the NV centers at the graphene and the graphene-free region. The results revealed that about half of the total NV centers (NV0 + NV−) at the graphene-free region were unstable, while over 90% of the measured NV centers at the graphene region were stabilized as NV− centers. Graphene/diamond junctions contribute significantly to charge-state stabilization of shallow NV− centers in (111) diamond.