Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing With Ferroelectric FETs
Guodong Yin, Yi Cai, Juejian Wu, Zhengyang Duan, Zhenhua Zhu, Yongpan Liu, Yu Wang, Huazhong Yang, Xueqing Li
Abstract
Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and resistance to device variations. However, the area occupation and standby leakage power of existing SRAM-based charge-domain CiM (CD-CiM) are high. This brief proposes the first concept and analysis of CD-CiM using nonvolatile memory (NVM) devices. The design implementation and performance evaluation are based on a proposed 2-transistor-1-capacitor (2T1C) CiM macro using ferroelectric field-effect-transistors (FeFETs), which is free from leakage power and much denser than the SRAM solution. With the supply voltage between 0.45V and 0.90V, operating frequency between 100MHz to 1.0GHz, binary neural network application simulations show over 47%, 60%, and 64% energy consumption reduction from existing SRAM-based CD-CiM, SRAM-based current-domain CiM, and RRAM-based current-domain CiM, respectively. For classifications in MNIST and CIFAR-10 data sets, the proposed FeFET-based CD-CiM achieves an accuracy over 95% and 80%, respectively.