Advances in Halide Perovskite Memristor from Lead-Based to Lead-Free Materials
Yuetong Fang, Shuaibo Zhai, Liang Chu, Jiasong Zhong
Abstract
Memristors have attracted considerable attention as one of the four basic circuit elements besides resistors, capacitors, and inductors. Especially, the nonvolatile memory devices have become a promising candidate for the new-generation information storage, due to their excellent write, read, and erase rates, in addition to the low-energy consumption, multistate storage, and high scalability. Among them, halide perovskite (HP) memristors have great potential to achieve low-cost practical information storage and computing. However, the usual lead-based HP memristors face serious problems of high toxicity and low stability. To alleviate the above issues, great effort has been devoted to develop lead-free HP memristors. Here, we have summarized and discussed the advances in HP memristors from lead-based to lead-free materials including memristive properties, stability, neural network applications, and memristive mechanism. Finally, the challenges and prospects of lead-free HP memristors have been discussed.