Zero-biased solar-blind photodetectors based on AlN/ <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> heterojunctions
Zhiyang Xu, Jinhao Zang, Xun Yang, Yancheng Chen, Qing Lou, Kaiyong Li, Chaonan Lin, Zhenfeng Zhang, Chongxin Shan
Abstract
Abstract Monoclinic gallium oxide ( β -Ga 2 O 3 ) has drawn much attention in solar-blind detection because of its unique characteristics such as good thermal and chemical stability, intrinsic visible/solar blind, high breakdown electric field, etc. However, the relatively slow response hinders the actual applications of β -Ga 2 O 3 photodetectors. In this work, AlN/ β -Ga 2 O 3 heterojunction photodetectors with a fast response speed of 320 ns have been developed. Moreover, the AlN/ β -Ga 2 O 3 heterojunction photodetector can work at 0 V with a responsivity of 7.0 mA W −1 and a detectivity of 1.25 × 10 13 cm Hz 1/2 W −1 . The results reported in this work indicate that AlN/ β -Ga 2 O 3 heterojunctions are feasible for solar-blind photodetectors with fast response and high sensitivity.