Use of Refractory‐Volatile Element Deep Eutectic Regions to Grow Single Crystalline Intermetallic Compounds
Tyler J. Slade, P. C. Canfield
Abstract
Abstract Compounds containing both refractory and volatile elements present a unique challenge for crystal growth, given the conflicting realities of high melting temperatures and high vapor pressures. Nevertheless, the discovery of superconductivity in FeAs and FeSe based materials and a Weyl semimetal state in TaP are motivations to explore compounds containing such pairs. Here, we discuss use of the low‐melting single phase liquid regions above deep M ‐ X eutectics ( M =transition metal, X =P, S) as the basis for high temperature solutions for growing intermetallic compounds containing volatile‐refractory pairs. We show that Ni‐P, Pd‐P, Pt‐P, and Pd‐S compositions form single phase melts at moderate temperatures below 1000 °C and with minimal vapor pressure. We first present the simple case of growing Ni 2 P from Ni‐P and next discuss the more complicated growth of R Pd 3 S 4 ( R =La, Ce, Nd, Eu) from a Pd‐S melt. We show how frit‐disc alumina crucible sets allow for contamination‐free capture of decanted liquid and its reuse in subsequent experiments, demonstrating a fractionation of the CePd 3 S 4 growth to determine the optimal conditions for crystal growth. We conclude by using the single phase liquid regions above the Pt‐P and Pd‐P eutectics to grow single crystals of M Pt 5 P ( M =Mn, Fe) and MnPd 5 P. As these materials have primarily been studied in polycrystalline form, we give an overview of the magnetic and transport properties of our single crystals. The examples outlined here illustrate the utility of using the single phase liquid above deep metal‐ X eutectics for solution growth and materials discovery.