Control of the Cu morphology on Ru-passivated and Ru-doped TaN surfaces – promoting growth of 2D conducting copper for CMOS interconnects
Cara‐Lena Nies, Suresh Kondati Natarajan, Michael Nolan
Abstract
molecular dynamics on these surfaces allows us to demonstrate how the Ru content can control copper wetting, adhesion and thermal stability properties. Activation energies for atom migrations onto a nucleating copper island allow insight into the growth mechanism of a Cu thin-film. Using this understanding allows us to tailor the Ru content on TaN to control the final morphology of the Cu film. These Ru-modified TaN films can be deposited by atomic layer deposition, allowing for fine control over the film thickness and composition.
Topics & Concepts
Materials scienceCopperInterconnectionDiffusion barrierElectroplatingAtomic layer depositionElectrical resistivity and conductivityNanotechnologyLayer (electronics)WettingDopingOptoelectronicsChemical engineeringComposite materialMetallurgyElectrical engineeringEngineeringComputer scienceComputer networkSemiconductor materials and devicesCopper Interconnects and ReliabilityElectrodeposition and Electroless Coatings