Molecular beam epitaxy growth of high mobility InN film for high-performance broadband heterointerface photodetectors
Ali Imran, Muhammad Sulaman, Shengyi Yang, Arfan Bukhtiar, Muhammad Qasim, Sayed Elshahat, Muhammad Saddique Akbar Khan, Ghulam Dastgeer, Bingsuo Zou, Muhammad Yousaf
Topics & Concepts
Materials scienceOptoelectronicsPhotodetectorMolecular beam epitaxyHeterojunctionResponsivityElectron mobilityBand gapEpitaxyUltravioletNanotechnologyLayer (electronics)GaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties