Strain-dependent exciton diffusion in transition metal dichalcogenides
Roberto Rosati, Samuel Brem, Raül Perea-Causín, Robert Schmidt, Iris Niehues, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch, Ermin Malic
Abstract
Abstract Monolayers of transition metal dichalcogenides have a remarkable excitonic landscape with deeply bound bright and dark exciton states. Their properties are strongly affected by lattice distortions that can be created in a controlled way via strain. Here, we perform a joint theory-experiment study investigating exciton diffusion in strained tungsten disulfide (WS 2 ) monolayers. We reveal a non-trivial and non-monotonic influence of strain. Lattice deformations give rise to different energy shifts for bright and dark excitons changing the excitonic landscape, the efficiency of intervalley scattering channels and the weight of single exciton species to the overall exciton diffusion. We predict a minimal diffusion coefficient in unstrained WS 2 followed by a steep speed-up by a factor of 3 for tensile biaxial strain at about 0.6% strain—in excellent agreement with our experiments. The obtained microscopic insights on the impact of strain on exciton diffusion are applicable to a broad class of multi-valley 2D materials.