Solution-processed flexible MAPbI<sub>3</sub> photodetectors with ZnO Schottky contacts
Longxin Yu, Longmei Mao, Yi Li, Xifeng Li, Jianhua Zhang
Abstract
With higher detectivity, lower response time, and good mechanical flexibility, perovskite photodetectors are supposed to be a promising alternative as the next generation of photodetectors. In this work, we fabricate a low temperature-processed flexible photodetector with ITO-ZnO Schottky contact via ALD technique which has a lower dark current decreasing from 2.04×10 −8 A/cm 2 to 1.70×10 −9 A/cm 2 under -0.5 V bias voltage actuation. With 530 nm laser irradiation, the flexible device exhibits excellent performance in detectivity of 6.19×10 12 Jones and LDR of 103dB. It also exhibits superior bending stability after 5000 bending circles.
Topics & Concepts
PhotodetectorMaterials scienceOptoelectronicsDark currentSchottky barrierBendingSchottky diodeOpticsPerovskite (structure)BiasingVoltageComposite materialPhysicsDiodeEngineeringChemical engineeringQuantum mechanicsPerovskite Materials and Applications2D Materials and ApplicationsSemiconductor Quantum Structures and Devices