A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors
Satyaprasad P. Senanayak, Mojtaba Abdi‐Jalebi, Varun S. Kamboj, Remington Carey, Ravichandran Shivanna, Tian Tian, Guillaume Schweicher, Junzhan Wang, Nadja Giesbrecht, Daniele Di Nuzzo, Harvey E. Beere, Pablo Docampo, D. A. Ritchie, David Fairen‐Jiménez, Richard H. Friend, Henning Sirringhaus
Abstract
/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.