Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period
Pengfei Jiang, Wei Wei, Yang Yang, Yuan Wang, Yannan Xu, Lu Tai, Peng Yuan, Yuting Chen, Zhaomeng Gao, Tiancheng Gong, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Yan Wang, Jianguo Yang, Qing Luo, Ming Liu
Abstract
Abstract The stability of remanent polarization ( P r ) during multiple operations is critical for memory applications, as the degradation of P r leads to misreading of stored information. In this letter, improved stabilization of P r during field cycling in HfZrO 4 (HZO)‐based ferroelectric devices by inserting a ZrO 2 layer is reported. This optimization method is inspired by the fact that the wake‐up effect of HZO is not obvious. By inserting a ZrO 2 layer, which prolongs the wake‐up period, the fatigue process is postponed. Thus, a stabilized P r is achieved during cycling. The endurance limit can reach over 10 10 cycles with no significant decrease in P r (<5%), which is beneficial for improving the reliability of devices in practical applications.