Room-temperature processed high-quality SnO <sub>2</sub> films by oxygen plasma activated e-beam evaporation
Jiankang Li, Lutao Li, Weiyuan Chen, Qinghua Yi, Guifu Zou
Abstract
Abstract Recently, SnO 2 is considered to be one of the most promising materials as electron transport layer in perovskite solar cells (PSCs). Low-temperature processed SnO 2 films are crucial for SnO 2 -based PSCs and flexible devices. However, it is difficult to prepare stoichiometric SnO 2 films by e-beam evaporation at low-temperature. Herein, SnO 2 films are fabricated by oxygen plasma activated e-beam evaporation technique at room-temperature. Oxygen plasma shows strong oxidation activity, which is essential to adjust the stoichiometry of SnO x in the evaporation process. The SnO 2 films exhibit uniformity ( R q = 3.05 nm), high transmittance ( T > 90%), high hall mobility ( μ e = 10.8 cm 2 V − 1 s −1 ) and good hydrophilic (water contact angle =19°). This work will promote the application of SnO 2 films in PSCs and flexible devices.