Intrinsic doping limitations in inorganic lead halide perovskites
Fernando P. Sabino, Alex Zunger, Gustavo M. Dalpian
Abstract
(p)F towards the valence band, for p-type doping) to be sufficiently large. We find that, even though in HP's based on Br and Cl there are numerous shallow level dopants that satisfy DP-(i), in contrast DP-(ii) is satisfied only for holes and DP-(iii) fails for both holes and electrons, being the ultimate bottleneck for the n-type doping in Iodide HP's. This suggests an intrinsic mechanism for doping limitations in this class of semiconductors in terms of recognized physical mechanisms.
Topics & Concepts
DopingFermi levelCondensed matter physicsDopantMaterials scienceSemiconductorElectronNanotechnologyOptoelectronicsPhysicsQuantum mechanicsPerovskite Materials and ApplicationsChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Properties