Structural and microwave dielectric properties of LiZnSbO<sub>4</sub> ceramcis for dielectric resonator antenna applications
Guoguang Yao, Ya Lü, Xu Gao, Cuijin Pei, Weihong Liu, Jin Liu, Peng Liu
Abstract
New microwave dielectric ceramics of LiZnSbO 4 were prepared by the reactive sintering method. Within the sintering temperature zone of 1350 ∘ C–1385 ∘ C, a single-phase LiZnSbO 4 with an orthorhombic structure was identified by XRD refinement, which contains 10 molecular formula per unit cell (i.e., [Formula: see text]). The relative density and average grain size had a main effect on [Formula: see text] and [Formula: see text] value of the LiZnSbO 4 ceramics, whereas the phase assemblage was responsible for its [Formula: see text]. The 1375 ∘ C-sintered LiZnSbO 4 specimens owned comparable low [Formula: see text], but ultra-high [Formula: see text][Formula: see text]GHz (nearly three times) compared to LiZnPO 4 and LiZnVO 4 ultra-high [Formula: see text][Formula: see text]GHz (nearly three times) compared to LiZnPO 4 and LiZnVO 4 manufactured, which showed a return loss as low as 37.4[Formula: see text]dB, maximum gain of 5.7[Formula: see text]dB and a fractional bandwidth of 3.9% (11.95–12.43[Formula: see text]GHz).