Multiple-Independent-Gate Reconfigurable FETs Processed on Industrial 300 mm FDSOI
Niladri Bhattacharjee, Yuqian He, Giulio Galderisi, Viktor Havel, Stefan Slesazeck, V. Sessi, Maximilian Drescher, M. Zier, Maik Simon, K. Ruttloff, K. Li, A. Zeun, A.-S. Seidel, C. Metze, M. Grothe, S. Jansen, J. Hoentschel, Thomas Mikolajick, Jens Trommer
Abstract
Reconfigurable Field Effect Transistors are emerging devices able to extend CMOS circuit functionality, since they can be operated as either n-type or p-type transistors. In this work, we demonstrate the fabrication of RFETs with multiple independent top gates on an industrial fully-depleted silicon-on-insulator technology featuring an ultra-thin buried oxide. The devices are fabricated using industrial 300 mm CMOS processes including the complete back-end-of-line. Two different RFET variants, featuring two and three independent top gates, are presented and their operation is analyzed. Electrical characteristics are discussed in detail, reporting larger than 106 on/off ratios, off-state currents as low as 10 pA/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m, and minimal subthreshold swings below 90 mV/dec, depending on the operation mode. Exploiting the body bias option offered by the FDSOI channels, we show that it is possible to boost the individual device performance, thus obtaining high on-state current densities of 32 (35) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>A/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m for n-type (p-type) operation.