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Surface analysis, gate leakage currents and electrical characteristics of Mn ions incorporated into ZrO2 gate dielectric layer in silicon MOS capacitors

J. Udaya Bhanu, P. Thangadurai

2020Materials Science in Semiconductor Processing12 citationsDOI

Topics & Concepts

Materials scienceCapacitorDielectricAnalytical Chemistry (journal)Gate dielectricHigh-κ dielectricLeakage (economics)Equivalent oxide thicknessOxideSiliconGate oxideOptoelectronicsElectrical engineeringMetallurgyVoltageEngineeringTransistorChemistryChromatographyMacroeconomicsEconomicsSemiconductor materials and devicesAdvanced Memory and Neural ComputingZnO doping and properties
Surface analysis, gate leakage currents and electrical characteristics of Mn ions incorporated into ZrO2 gate dielectric layer in silicon MOS capacitors | Litcius