Single-Event Effects in Ground-Level Infrastructure During Extreme Ground-Level Enhancements
A. Dyer, Alex Hands, Keith Ryden, C. S. Dyer, I. D. Flintoft, A. Ruffenach
Abstract
We take an initial look at hard single-event effects (SEEs) in power electronics and static random access memories (SRAMs) during space weather-induced extreme ground-level enhancement (GLE) events. We show that there is a significant risk of failure of silicon power metal-oxide- semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs) at ground level during a 10× February '56 GLE. If the devices are not derated, then we find that 21% of power MOSFETs and 14% of IGBTs are, in the worst case, predicted to fail. The probability of failure increases to 68% and 52% during a once-in-a-10000-year GLE for power MOSFETs and IGBTs, respectively. Silicon carbide devices show a lower failure rate by more than an order of magnitude, where only 2.8% are predicted to fail during a once-in-a-10000-year GLE. It is clear that these events could disrupt critical infrastructure if mitigating precautions are not implemented.