Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in α-Ga2O3
Alexander Azarov, Javier García‐Fernández, J. Zhao, Ru He, Ji‐Hyeon Park, Dae‐Woo Jeon, Øystein Prytz, Flyura Djurabekova, Andrej Kuznetsov
Abstract
Disorder-induced ordering and remarkably high radiation tolerance in γ-phase of gallium oxide is a recent spectacular discovery at the intersection of the fundamental physics and electronic applications. Importantly, by far, these data were collected with initial samples in form of the thermodynamically stable β-phase of this material. Here, we investigate these phenomena starting from metastable α-phase and explain radically new trend occurring in the system. We argue that in contrast to that in β-to-γ disorder-induced transitions, the O sublattice in α-phase exhibits hexagonal close-packed structure, so that to activate α-to-γ transformation significant structural rearrangements are required in both Ga and O sublattices. Moreover, consistent with theoretical predictions, α-to-γ phase transformation requires accumulation of the substantial tensile strain to initiate otherwise impossible lattice glides. Thus, we explain the experimentally observed trends in term of the combination of disorder and strain governed process. Finally, we demonstrate atomically abrupt α/γ interfaces paradoxically self-organized out of the stochastic disorder.